jjc' s sidac (silicon diode for alternating current) represents an unique set of thyristor qualities. the sidac is a bidirectional voltage triggered switch. upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state voltage. conduction will continue until the current is interrupted or drops below the minimum holding current of the device. at present, jingheng can offer three kinds of package in do-41,r 1 mini melf sma sod 123fl jingheng's sidacs feature glass passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments. -- ,,- bilateral voltage triggered ac circuit oriented glass-passivated junctions high surge current capabilities high voltage lamp ignitors xenon ignitors natural gas ignitors over voltage protector gas oil ignitors high voltage power supply pulse generators fluorescent lighting ignitors hid (high intensity discharge) lighting ignitors features applications general description sidac bilateral voltage triggered swit h breakover voltage:95-330volts c sma(do-214ac) 0.065(1.65) 0.090(2.29) 0.181(4.60) 0.208(5.28) 0.060(1.52) 0.012(0.305) 0.008(0.203) max 0.110(2.79) 0.049(1.25) 0.078(1.98) 0.157(3.99) 0.189(4.80) 0.030(0.76) 0.006(0.152) 0.100(2.54) mini melf(do-213aa) - 0.144(3.65) 0.136(3.45) solderable ends 1st band 0.067(1.7) 0.059(1.5) 0.018(0.45) 0.010(0.25) sod-123fl 0.039(1.00 ) 0.020(0.50) 0.077(1.95 ) 0.054(1.38) 0.114(2.90 ) 0.098(2.50) 0.154(3.90) 0.138(3.50) 0.010(0.25) max 5 0.052(1.33) 0.031(0.8) 0.010(0.25) min r-1 0.140(3.5) 0.102(2.6) 0.025(0.65) 1.0(25.4) min. 0.116(2.9) 0.091(2.3) dia. 0.0 (0.5 ) dia. 21 5 1.0(25.4) min. do-41 inches (millimeters) 0.205(5.20) 0.107(2.7) 0.034(0.85) 1.0(25.4) min 1.0(25.4) min 0.161(4.10) 0.080(2.0) dia. 0.026(0.65) dia. www.shunyegroup.com.cn
dynamic holding current 50/60hz sine wave r=100 ohms peak on-state voltage i =1amp t peak one cycle surge current 50/60hz sine wave (non-repetitive) switching resistance rs = (v -v ) bo s (i ) bo s -i 50/60hz sine wave critical rate-of-rise of off-state voltage at rate v t 100 c drm j Q critical rate-of-rise of on-state current mamps amps volts max 60hz 50hz volts/ second amps/ second typ max typ min min i h v tm i tsm r s d/d vt d/d it 40 40 40 40 40 40 40 40 40 40 40 100 100 100 100 100 100 100 100 100 100 100 20 . 20 . 20 . 20 . 20 . 20 . 20 . 20 . 20 . 20 . 20 20 20 20 20 20 20 20 20 20 20 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 150 150 150 150 150 150 150 150 150 150 150 k electrical specifications part number i t(rms) v drm v bo i drm i bo db105r db110r db120r db130r db140r db150r db200r db220r db250r db240r on-state rms current t j 110 c 50/60hz repetitive peak off-state voltage breakover voltage 50/60hz sine wave repetitive peak off-state current 50/60hz sine wave v=v drm breakover current 50/60hz sine wave volts volts amps amps Q min max max max max min 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 90 90 90 90 90 90 180 190 190 180 190 205 104 110 190 140 130 120 95 270 240 220 230 118 125 215 170 146 138 113 330 280 250 5 5 5 5 5 5 5 5 5 5 5 10 10 10 10 10 10 10 10 10 10 10 sm a db105s db110s db120s db130s db140s db150s db200s db220s db250s db240s 1.0 1.0 db300r db300s db105a db110a db120a db130a db140a db150a db200a db220a db250a db240a db300a amps 20 . do-41 r1 - db105k db110k db120k db130k db140k db150k db200k db220k db250k db240k DB300K ll105 ll110 ll120 ll130 ll140 ll150 ll200 ll220 ll250 ll240 ll300 - sod 123fl - mini melf www.shunyegroup.com.cn
electrical specifications i t r s r s= v bo v t v s v drm i h i s i bo i drm -i +i +v (bo-s) (s-bo) vv ii v-i characteristics fig.1 normalized dc holding current vs case/lead temperature case temperature(t ) c c ratio of i h i (tc=25 c) h surge current duration- full cycles fig.2 peak surge current vs surge current duration peak surge (non-repetitive) on-state current (i )-amps tsm 1.0 1.0 2.0 4.0 6.0 8.0 10 20 30 40 100 10 100 1000 supply frequency: 60hz sinusoidal load: resistive rms on-state current: it rms maximum rated value at special junction temperature blocking capability may be lost during and immediately following surge current imterval overload may not be repeated until junction temperature has returned to steady-state rated value -v fig.3 normalized repetitive peak breakover current vs junction temperature junction temperature (t )- c j repetitive peak breakover current (i ) multiplier bo v=v bo 1 20 30 50 70 90 110 40 60 80 100 120 2 5 4 3 6 7 8 9 junction temperature(t ) c j percentage of v changes-% bo fig.5 normalized c changes vs case temperature bo 0 +4 -4 -6 -8 -12 -40 +40 +60 +80 +100 +120 -20 +25 +20 0 -10 +2 -2 fig.4 repetitive peak on-state current (i ) vs pulse width at various frequencies trm non-repeated f=10hz f=1khz f=5khz f=10khz f=20khz f=100hz repetition frequency f=5hz to vt i trm di/dt limit line pulse base width (to)-msec. repetitive peak on-state current (i )-amps trm t =110 c max j v bo firing current wavetorm 4 0.6 0.8 1 2 4 40 6 60 200 400 600 8 80 10 20 100 44 666 8881 22 2x10-3 1x10-2 1x10-1 www.shunyegroup.com.cn
electrical specifications fig.6 ignitor circuit (low voltage input) 4.7 f 4.7k 200v sidac h.v. ignitor 1.2 f 4.7 f 100v 10 f 50v + + - - 24vac 60hz fig.7 typical high pressure sodium lamp firing circuit sidac sidac lamp lamp 16mh 120vac 60hz 120vac 220vac 220vac 50hz 3.3k 7.5k ballast ballast 0.47 f 400v 0.22 f fig.10 dynamic holding current test circuit for sidac fig.8 comparison of sidac vs scr fig.11 basic sidac circuit fig.9 xenon lamp flashing circuit sidac v bo load v bo v bo 125-145 i h i h i h scope i h i pk push to test trace stopes load current conduction angle device under test switch to test in each directions s1 sidac xenon lamp 100-250 vac 60hz 100-250 vac 60hz 100-250 vac 60hz 100-250 vac 60hz 120vac 60hz 100 100 1% 20m 250v 4kv + + - - - 10 f 10 f 250v 0.1 f 400v v bo v bo www.shunyegroup.com.cn
electrical specifications fig.12 relaxation oscillator using a sidac (a) circuit sidac r r l v bo (b) waveforms v c i l t t i l v c c rmax rmin v-v i in bo bo v-v i in tm h(min) vv dc(in) bo input + + - - (see note b) r =150 bb1 r =0.1 s r =100 bb2 v=0 bb2 v =10v bb1 v =20v cc v monitor ce i monitor c tip-47 100mh 0v 5v 0.63a 0 sidac v bo collector voltage voltage and current waveforms note a note b : input pulse width is increased until i =0.63a. : sidac (or diac or series of diacs) chosen so that v is just below v rating of transistor to be protected. the sidac (or diac) eliminates a reverse breakdo wn of the transistor in inductive switching circuits where otherwise the transistor could be destroyed. cm bo ceo test circuit input voltage t =3ms (see note a) w t w 100ms collector current v ce(sat) 10v 50 50 2n6127 (or equivalent) fig.13 sidac added to protect transistor for typical transistor inductive load switching requirements www.shunyegroup.com.cn
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